Chemical vapour deposition temperature

The alkoxides and aryloxides, particularly of yttrium have excited recent interest. This is because of their potential use in the production of electronic and ceramic materials,in particular high temperature superconductors, by the deposition of pure oxides (metallo-organic chemical vapour deposition, MOCVD). They are moisture sensitive but mostly polymeric and involatile and so attempts have been made to inhibit polymerization and produce the required volatility by using bulky alkoxide ligands. M(OR)3, R = 2,6-di-terr-butyl-4-methylphenoxide, are indeed 3-coordinate (pyramidal) monomers but still not sufficiently volatile. More success has been achieved with fluorinated alkoxides, prepared by reacting the parent alcohols with the metal tris-(bis-trimethylsilylamides) ... 

Verheijen, J., Bongaerts, P., and Verspui, G., Low Pressure Chemical Vapour Deposition of Temperature Resistance Colour Filters, Proc. 10th. Int. Conf. on CVD, (G. Cullen, ed.), pp. 977-981, Electrochem. Soc., Pennington, NJ 08534 (1987)... 

An example of this process of data analysis is provided by the work of Yubero et al. (2000), who studied the structure of iron oxide thin films prepared at room temperature by ion beam induced chemical vapour deposition. Such films find important applications because of their optical, magnetic, or magneto-optical properties. They were produced by bombardment of a substrate with Oj or Oj + Ar+ mixtures, and Figure 4.15 shows RBS spectra of two iron oxide thin films prepared on a Si substrate by each of these bombardment methods. 

Cryogenic CVD At a very low (freezing) temperature Chemical vapour deposition... 

Plasma Enhanced Chemical Vapour Deposition (PECVD) Chemical vapour deposition (CVD) reactions commonly occur at high temperatures (Table II). The use of a plasma to generate chemically reactive species in conjunction with CVD overcomes one of the most common... 

Motta MS, Moisala A, Kinloch IA, Windle AH. The role of sulphur in the synthesis of carbon nanotubes by chemical vapour deposition at high temperatures. Journal of Nanoscience and Nanotechnology. 2008 May 8(5) 2442-9. 

At temperatures around 600°C and extremely low pressures, methane will decompose and deposit a thin film of carbon, in the form of diamond, on a surface. The process, known as chemical vapour deposition, or CVD, can be used to coat a wide variety of surfaces. The hardness of this diamond film can be used for applications that require non-scratch surfaces such as cookware, eyeglasses, and razor blades. 

Plasma-enhanced chemical vapour deposition has gained importance rapidly in recent years, because this technique provides some unique advantages over conventional CVD. The important advantages include lower deposition temperatures, deposition of non-epuilibrium phases and a better control of stoichiometry and purity of deposits. In this technique, the activation energy for the breakdown of reactive species, and their subsequent interaction with other species to form a deposit, is provided by the high kinetic energy of electrons in the plasma (figure 13.2). 

The assumption of equilibrium which is implicit in EQN (1) is expected to be satisfied at the high temperatures at which metal-organic chemical vapour deposition (MOCVD) growth of nitrides is carried out. At lower temperatures, such as those used in molecular-beam epitaxy (MBE), deviations from equilibrium may occur. 

Halary, E., Benvenuti, G., Wagner, F. and Hoffmann, P. (2000). Light induced chemical vapour deposition of titanium oxide thin films at room temperature. Appl. Surf. Sci. 154, 146-151. 

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