Charge Transfer Imaging Devices

A. F. Milton, "Charge Transfer Devices for Infrared Imaging," in Ref. 5. 

II] R. A. Chapman, S. R. Borrello, A. Simmons, J. D. Beck, A. J. Lewis, M. A. Kinch, J. Hynecek and C. G. Roberts, "Monolithic HgCdTe Charge Transfer Device Infrared Imaging Arrays , IEEE Trans. Electron Devices, ED-27 (1), 134-145, January 1980. 

A new type of imaging devices has been introduced a decade ago These devices consist of an array of photo-sensitive diodes, coupled to a CCD read-out system. CCD s are based upon the transfer of charge packets in a repetitive metal-oxid°-silicon (MOS) structure (see Fig. 20). The charges in the elements of a CCD can be photo-generated, e.g. by the absorption of X-rays in the substrate, and then shifted out electronically to a single output. In a way CCD s operate as the solid state selfscanning equivalent of a vidicon-tube. 

Figure 14.10 Optical scheme for a spectrophotometer with an echelle grating. For clarity only the central section of the beam issuing from source 1 is represented (this beam should cover the whole mirror 2). The echelle grating 5, separates the radiations arriving from the source in the horizontal plane (in x). The prism then deviates the radiation in the vertical plane (in y). The path of three different spectral lines is shown. The images of the entrance aperture 2 are in the focal plane 8. In the past, to detect these radiations, photomultiplier tubes (PMT) of reduced size were installed in specific places, but now charge transfer devices (charge coupled or charge injection devices, CCD/CID) are used, as an electronic equivalent of photographic plates. This allows a continuous spectral cover from 190 to 800 nm with excellent resolution. Sensors of 500 X 2000 pixels (each 12 x 12p,m) are now used.

R.A.Chapman, S.R.Borrello, A.Simmons, J.D.Beck, A.L.Lewis, M.A.Kinch, Jollynecek, C.G. Roberts Monolithic HgCdTe Charge Transfer Device Infrared Imaging Arrays , to be published IEEE Trans. Elect. Dev. 

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