Charge pooling devices

Dendrimers possessing a large number of chemically identical redox units can be defined as charge pooling devices only if they satisfy some conditions. Their redox units should be... 

CCD = charge-coupled device IHIs = interligand hypervalent interactions ILL = Institut Lane-Langevin INS = inelastic neutron scattering IPNS = intense pulsed neutron source LINAC = linear accelerator MaNDi=macro-molecular neutron diffractometer NiMH=nickel-metal OPAL = open pool Australian light-water reactor hydride SANS = small-angle neutron scattering SNS = spallation neutron source. 

Schottky devices have recently been fabricated by thermal evaporation of indium on polyaniline, poly(o-anisidine) and poly(aniline-co-or oanisidine), respectively [103]. The values of the rectification ratio, the ideality factor and the barrier height of an indium/poly(o-anisidine) have been experimentally determined as 300,4.41 and 0.4972, respectively. The observed deviation from the Schottky behaviour for these devices seen at higher voltages has been explained in terms of either the Poole-Frenkel effect or due to the presence of a large number of defects containing the trapped charges existing at the indium/poly (aniline-co-or oanisidine) interface. 

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