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Charge contrast imaging mode

Electrically active regions of nanocrystalline silicon (nc-Si) films have been investigated by using a SEM/STM combined instrument. STM constant current images reveal a cell structure in the nc-Si which is also observed in the remote electron beam induced mode of the STM. The STM-REBIC contrast indicates the existence of space charge regions at the cell boundaries. [Pg.475]

The present results show the capability of the STM-REBIC technique to image electrically active defects or regions in nc-Si films. The spatial resolution achieved in the STM-REBIC mode was about 20 run. The signal profiles obtained in the boundaries of the cell stmcture observed in nc-Si are in agreement with an electrically charged boundary model. Aimealing of the samples leads to the disappearance of the STM-REBIC as well as the CITS contrast. [Pg.477]

Eqs. (3) and (9) allow one to explain the observed variations in the contrast of images obtained in a non-contact (surface potential) mode, in particular, the inverse contrast (small P, large AA and o) which, otherwise, would require an ill-defined concept of overscreening the polarization by free charges [8, 14]. We can illustrate this with two EFM images shown in Figs. 2 and 3. [Pg.102]

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