Butler-Gartner model

Figure 23. Comparison of calculated current-voltage characteristics of n-type semiconductor-electrolyte junction device under illumination of 1 mA cm-2 (equivalent) photon flux.169 Parameters used are LD = 0.5 x 10-4 cm, 7V = 1016cm3, a = 3 x 104cm 1, nt = 107cm-3, e = 12, AV C = 0.7 V, r = 10-9 sec, and the electron and hole exchange current parameters are 1O 10 mA cm-2 and 10-5 mA cm-2, respectively. (a) Gartner s (Butler s) model [Eq. (103)]. (b) Reichman s model considering both electron and hole currents but neglecting the space charge recombination, (c) Reichman s model with the space charge recombination, (d) As (b) but in dark.

Models of i-V data for sensitized electrodes invariably begin with Gartner s treatment developed for solid-state junctions [28] that was later extended to photo-electrochemical cells by Butler [29]. In Gartner s model, light absorption by the semiconductor itself yields a photocurrent that contains a drift component asso-... 

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