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Bulk GaN platelet crystals

A 7.5 Structural characterisation of bulk GaN platelet crystals B CRYSTAL CHARACTERISATION, INFLUENCE OF POLARITY... [Pg.231]

The lattice constants for undoped GaN and the highly conductive Ga Zn and GaN Ca bulk crystals vary slightly for different crystals as well as for different areas of the individual crystals [26,28], This is caused by the differences in free electron concentration and can lead to certain strains in the crystals. For the Mg-doped crystals, there are no free electrons and therefore the lattice parameters are uniform for individual crystals and the same for different samples [28], Elimination of the strains in the GaN Mg crystals is the reason for the improvement of their structure. The rocking curves are narrower and no low angle boundaries are observed even for 8 mm single crystalline GaN Mg platelets. The strains in the undoped GaN crystals are extremely small (<0.02%) but their presence can adequately explain the wider rocking curves than for the Mg-doped samples. [Pg.364]

See other pages where Bulk GaN platelet crystals is mentioned: [Pg.208]    [Pg.230]    [Pg.232]    [Pg.234]    [Pg.235]    [Pg.237]    [Pg.238]    [Pg.208]    [Pg.230]    [Pg.232]    [Pg.234]    [Pg.235]    [Pg.237]    [Pg.238]    [Pg.232]    [Pg.230]    [Pg.236]    [Pg.257]    [Pg.10]    [Pg.53]    [Pg.60]    [Pg.54]   
See also in sourсe #XX -- [ Pg.230 , Pg.257 , Pg.258 , Pg.362 , Pg.363 ]



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