Boron zinc blende-type

Cubic boron nitride (cBN) has a zinc blende-type crystal structure with a lattice constant of 3.615 A, which is very close to that of diamond (3.567 A). The difference is only about 1.3%. According to RHEED measurements with the electron beam parallel to the 111 layer of cBN, a growth of diamond by DC plasma CVD on cBN(lll) [150] using c = 0.5%CH4/H2, T = 900°C, and F=180Torr led to a result that a smooth (111) layer of diamond was epitaxially deposited in such a way that the [110] direction of diamond was parallel to that of cBN. Namely, D 111 //cBN(lll and D[110]//cBN[110]. In the RHEED pattern, however, extra spots were observed, which were presumably due to the twinnings of (111 diamond layers. In the Raman spectra, there were two lines due to cBN at 1054.5 and... 

In this class of binary compounds, a new tetragonal form of boron sulfide B2S3 prepared by high-pressure synthesis is noteworthy. Remarkably, instead of a simple structure related to that of normal ambient pressure form of B2 S3, it contains two kinds of supertetrahedra built up from 20 and 34 adamantane-type superclusters to form an elaborate three-dimensional framework (Figure 4) These supertetrahedra are linked to each other in a unique way forming an interpenetrating zinc-blende-type structure. This compound is a wide band-gap semiconductor with an energy gap of 3.7 eV. 

The monophosphides MP, where M = B, Al, Ga or In, form an important group of phosphides in which each attmi is tetrahedrally coordinated by atons of the opposite kind in a cubic zinc blend-type similar to those of diamond, silicon and boron nitride (Figure 8.11). These monophosphides are hard high melting point compounds which have important semiconductor properties, and the system. GaP-... 

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