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Boron Nitride Phases with Additional Elements

11 Boron Nitride Phases with Additional Elements [Pg.149]

Mixed boron nitride phases with nonmetals (ceramics) have been treated in Section 4.1.1.10.3, p. 76, and those with metals in Section 4.1.1.10.4, p. 99 (alloys in semiconductor application, see Section 4.1.1.10.8, p. 129). A selection of typical mixed BN-based phases is compiled in the following summary. [Pg.149]

Boron-carbon-nitride ceramic is deposited on iron-based sliding parts by chemical vapor deposition (CVD) it is used as rotary compressor shafts, in order to improve the wear resistance [1 to 5]. Such B-C-N coatings have also been applied to dynamic pressure air bearings [6]. In gas-cooled nuclear reactors, °B-enriched B-C-N can be deposited by CVD in the fluid channels of the fuel elements for permanent deactivation in case of an emergency [7]. Radiofrequency or microwave-enhanced CVD is employed in order to deposit a diamond carbon and (3-BN superlattice structure [8]. [Pg.149]

As a boron nitride film, a B-C-N passivation film can also be deposited by plasma-enhanced CVD in semiconductor devices [9], and hydrogenated boron nitride carbide films are applied for X-ray mask membranes. The radiofrequency (13.56 MHz) plasma-enhanced CVD process uses B2H6, CH4, and Ng or NH3 as source gases, or in a sputtering process with a boron target, CH4, N2, and Ar are used [10 to 18]. A B-C-N mixed phase can also be prepared by N ion implantation into B4C at 100 keV [19]. [Pg.149]

B-N-Ti ternary ceramics are either deposited by thermal CVD from BCI3, TiC, NH3, and H2 on graphite substrates [20, 21], or by sputtering boron and titanium in an Ar/N2 atmosphere to coat a molybdenum substrate [22]. [Pg.149]


See other pages where Boron Nitride Phases with Additional Elements is mentioned: [Pg.30]    [Pg.216]    [Pg.15]    [Pg.2]   


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Additional Elements

Boron addition with

Boron elemental

Boronate addition

Elements with

Phase addition

Phase additivity

Phase element

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