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Germanium—bismuth bonds

The silicon-bismuth bond has been demonstrated in a number of compounds such as Bi(SiF3)3, a volatile crystalline compound184 which decomposes on heating it is air and moisture sensitive. Germanium-bismuth compounds can be prepared by the use of Bi(SiEt3)3 (equations 52 and 53).185... [Pg.280]

Many elemental metalloid surfaces, on the other hand, are considered to have perturbed structure when clean. Examples are the (HI), (HO), and (100) faces of silicon and germanium 126a, 338), the (HI) and (100) faces of diamond 286, 287), the (1120) planes of bismuth and antimony 297), and the (1000) surface of tellurium 325). It is believed that the (HI) and (100) planes of GaAs have altered periodicities also 133, 339). Distortions of all these covalently bonded surfaces are explained by assuming configurations that partially satisfy the free valence of the strongly directional cut bonds. These structures are complex and not yet completely determined 340-344). [Pg.211]


See other pages where Germanium—bismuth bonds is mentioned: [Pg.92]    [Pg.3288]    [Pg.133]    [Pg.256]    [Pg.158]    [Pg.5]    [Pg.202]    [Pg.413]    [Pg.158]    [Pg.91]    [Pg.146]    [Pg.127]    [Pg.1051]    [Pg.114]    [Pg.151]    [Pg.182]    [Pg.1033]    [Pg.61]    [Pg.119]    [Pg.136]    [Pg.85]    [Pg.254]   


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Bismuth bonding

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