Basal stacking faults

DSE of nonpolar [1120] surfaces, at regions close to the parasitic grains, shows lines perpendicular to the c axis of the crystal as probably being the basal stacking faults. 

Figure 10.7 High-resolution images of basal stacking faults with indicated stacking (a) li fault with the sequence. .. ABABCBCB... (b) I2 fault with the stacking sequence. .. ABABCACA... and (c) I3 fault with the stacking sequence. .. ABABCABAB ...

Figure 10.10 Bright-field image (g = 1010) of inclined prismatic stacking faults, each bounded by two basal stacking faults.

FigurelO.il Termination of two li basal stacking faults (BSFs) by PSF (schematic representation), s and —s represent 1 /5[1010] and 1 /6 [1010] stair-rod dislocations.

Figure 10.14 Epitaxial relationships between 4H-SiC substrate and AIN buffer layer. Different basal stacking faults are considered to be present in the AlN layer ...

Fig. 4.9 Stacking of hexagonal basal planes in graphite left). Mechanical activation results in a structure with prohferation of faults in the plane stacking right). The change of stacking sequences in nearby subgrains is marked by arrows. The stacking fault disorder is corroborated from the nonuniform peak broadening or absence of hk indexed peaks in XRD pattern (see Sect. 1.3.3.3)...

A7.2 Planar defects in GaN basal plane faults, prismatic faults, stacking mismatch boundaries and inversion domain boundaries... 

The most common extended defects in the wurtzite structure (a-phase) of the Ill-nitrides, grown by heteroepitaxy, are line dislocations and basal plane stacking faults. A high density of defects occurs in these materials due to the lack of available substrates with a similar lattice constant, chemical similarity, or similar thermal expansion coefficients. 

FIGURE 2 Stacking sequence and associated stacking fault displacement vectors for three types of basal plane stacking fault in GaN. The double lines indicate the fault plane. The stacking fault vectors are shown for each fault. 

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