Basal plane stacking faults

Regarding PSFs in a-plane GaN, one type has been identified lying on 1210 planes inclined at an angle of 60° with respect to the (1120) growth plane [46], The lateral extension of these PSFs is only a few nanometers and they are terminated by BSFs of Ji-type bounded by l/6[10l0] and 1/6[1010] stair-rod dislocations. 

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The most common extended defects in the wurtzite structure (a-phase) of the Ill-nitrides, grown by heteroepitaxy, are line dislocations and basal plane stacking faults. A high density of defects occurs in these materials due to the lack of available substrates with a similar lattice constant, chemical similarity, or similar thermal expansion coefficients. 

FIGURE 2 Stacking sequence and associated stacking fault displacement vectors for three types of basal plane stacking fault in GaN. The double lines indicate the fault plane. The stacking fault vectors are shown for each fault. 

I 7 7 Defects and Interfacia Structure of a-plane GaN on r-plane Sapphire 11.2.3.1 Basal Plane Stacking Faults... 

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