Ballistic diffusion coefficient

It is important to note that Eqs. 5, 8, and 9 were derived entirely from a silicon material balance and the assumption that physical sputtering is the only silicon loss mechanism thus these equations are independent of the kinetic assumptions incorporated into Eqs. 1, 2, and 7. This is an important point because several of these kinetic assumptions are questionable for example, Eq. 2 assumes a radical dominated mechanism for X= 0, but bombardment-induced processes may dominate for small oxide thickness. Moreover, ballistic transport is not included in Eq. 1, but this may be the dominant transport mechanism through the first 40 A of oxide. Finally, the first 40 A of oxide may be annealed by the bombarding ions, so the diffusion coefficient may not be a constant throughout the oxide layer. In spite of these objections, Eq. 2 is a three parameter kinetic model (k, Cs, and D), and it should not be rejected until clear experimental evidence shows that a more complex kinetic scheme is required. 

The particles travel with speed y and turn with frequency jx. The persistent random walk is characterized by two parameters, in contrast to the ordinary random walk or Brownian motion, which is completely characterized by the diffusion coefficient D. The persistent random walk spans the whole range of dispersal, from ballistic motion, in the limit /r 0, to diffusive motion, in the limit y oo, p. oo, such that lim y 2p = Z) = constant. The total density of the dispersing particles is given by... 

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