Analysis of the Electrical Characteristics

Cj denotes the capacitance per unit area of the gate insulator (c = 18.5 nF/cm ), W the channel width, and L the channel length. This second method is denoted as method B in the following. With respect to method A, it has the advantage that mobilities can be also determined in the region of small values of Fd.  

From I-Q-V-o curves measured at different temperatures down to 4 K, mobilities were determined as a function of temperature using method A. The obtained /u+ values are displayed in an Arrhenius plot in Figpre 8.8. The mobilities are found to be temperature activated and decrease by about two orders of magnitude, when the temperature is reduced from 300 K to about 100 K. This is clear indication that trapping of the charge carriers plays a role here. 

It is plausible, and will indeed be demonstrated for our data below, that the charge carrier traps are related to structural defects and/or disorder near the AlOyPc interface. It is further conceivable that there exists some energetic distribution of the traps, and hence has to be seen as a mean energy depth of the traps with respect to the valence band edge, or more generally with respect to some kind of a mobility edge. An often used model which is compatible 

3 Detailed Analysis of the Field Effect Mobilities as a Function of Vj) and 

To begin with, we demonstrate that /jj- Fq curves based on the ideal OFET equations according to Ref. [28]  

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