AlxGai xAs

The DFT calculations for both the AlxGai xAs alloy and the ZnSe nanoparticles were challenging because of the need to take into account large numbers of unit cells that differed either in composition (for the alloy) or distance from the surface (for the nanoparticle). They indicate that, in addition to calculating NMR parameters of the bulk semiconductors with reasonable accuracy, it is now possible... 

Figure 5. Solid composition versus vapor composition for the group lll-V alloys AlxGai-xAs and InAsi-xSbx (89).

Figure 1. The two-dimensional systems with different types of SO coupling. Possible realizations for A/B are, for example, AlxGai xAs/GaAs or Gei xSix/Si, respectively, (a) Heterojunction with the strongest asymmetry arising due to the interfaces, (b) One-side doped QW with the asymmetry arising due to the doping, (c) Symmetrically doped QW with a random local asymmetry.

New results on the influence of uniaxial stress up to / = 4 kbar along [110] and [1-10] directions on the electroluminescence spectra of laser diode nanostructures p-ALGai-xAs/GaAsi.yP,/ -AlxGai.xAs are presented. With the increasing stress, the emission spectra demonstrate a blue shift of up to 20-25 meV at P = 3-4 kbar, while the electroluminescence intensity and light efficiency increase under compression. The results are discussed in terms of changes in the band structure under an uniaxial compression. 

C. Traeholt, Ph. D. Thesis, Electron microscope investigation of GaAs/ AlxGai xAs heterostmcture and the high temperature superconductor YBa2Cu307-x , Physics Department, Technical University of Denmark (1994). 

FIGURE 11 Cross section of a typical double heterostructure AlxGai xAs LED. The composition of the light-emitting layer is chosen to emit light at 820 nm in the infrared portion of the spectrum. 

R. Dingle, W. Wiegmann, C. H. Henry Quantum states of confined carriers in very thin AlxGai xAs-GaAs-AlxGai xAs heterostructures, Phys. Rev. Lett. 33, 827-830 (1974)... 

ALD reactions involving more than two elements can also be designed. For the case of deposition of an alloy (for example a pseudobinary alloy), one must rely on a well-characterized competition for surface reaction sites. Thus, to deposit an AlxGai xAs alloy one would need to know how an A1 precursor would compete with a Ga precursor for a favored metal deposition site. An experimental variable such as surface temperature could alter this competition and give some control of the resulting film alloy composition. 

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