Electron concentration AlGaN

AlGaN alloys doped with Si have been grown by electron cyclotron resonance (ECR) MBE at temperatures between 700 and 800°C [23,24], These layers were found to have net carrier concentrations of 1016 to 1019 cm 3 as measured by the Hall effect technique. The carrier concentration varies only slightly on alloying up to 25% Al. The samples were found to be smooth and free from cracks. Murakami et al also reported crack-free surfaces of Si doped Alo.1Gao.9N with a carrier concentration of up to 2 x 1018 cm 3 [25],... 

Chen, K., Wang, H., Kang, B., Chang, C., Wang, Y., Lele,T.,Ren,E, Pearton, S.,Dabiran, A., Osinsky, A. and Chow, P. (2008) Low Hg(If) ion concentration electrical detection with AlGaN/GaN high electron mobihty transistors . Sensors And Actuators B-Chemical, 134(2), 386-389. 

Lu, W., Kumar, V., Piner, E. L. and Adesida, I. (2003) DC, RE, and, microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration , IEEE Transactions on Electron Devices, 50(4), 1069-1074. 

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