Acceptors semiconductor sensors

All the aforesaid on the adsorption of acceptor atom and molecular particles lends support to the general conclusion of suitability of the designed sintered semiconductor oxide films (mainly ZnO) as highly sensitive semiconductor sensors meant to quantitatively detect extremely low concentrations of atom and molecular acceptor and donor particles in a concentration range of 10 -10 atoms per cubic centimetre in the volume adjacent to a semiconductor sensor. 

Activation and conductivity at room temperature are problems that can be addressed by the incorporation of other electronic structures that increase carrier transport. Crystal morphology is an important parameter in the boron doping process to determine uncompensated acceptors (Aa-Ad) for different crystal facets as a function of doping concentration. The temperature coefficient of resistance for a CVD diamond film can be changed by boron doping. As conductivity depends on the crystal phase, the combined electromechanical properties can be exploited in sensor applications both for resistive temperature detectors and for pressure transdu-cers. " As electrical conductivity is related linearly with boron concentration, a better-controlled process may allow for the development of better semiconductor devices improving crystal quality and operating limits. ... 

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