AA-CVD

Metal sulfide films were also deposited by aerosol-assisted (AA)CVD, as exemplified by the results for Ca(SOCMe)2(15-crown-5) described here. 

Tin dioxide thin films can be grown on silicon at room temperature by XeCl excimer laser metal-organic deposition (MOD 100 mJ cm, repetition rate 10 Hz for 5 min) from a solution of Sn(acac)2 in w-BuOH, whereby crystalline films were obtained without heat treatment . Increasing the laser energy to 260 mlcm resulted in an improvement of the crystallinity, which is even better than that of films prepared at 900 °C without laser irradiation. Molloy and coworkers used bimetallic [Sn(dmae)2Cd(acac)2]2 (dmae = dimethylaminoethanol) as precursor for AA-CVD of amorphous Sn02 films, containing no detectable amounts of cadmium. 

Giling LJ, De Moor HHC, Jacobs WPJH, Saaman AA (1986) J Crystal Growth 78 303 A study on silicon CVD using SiH4 dealing with adsorption processes related to supersaturation of the gas phase is reported. 

Zinn AA, Brandt L, Kaesz HD, Hicks RFF (1994) The Chemistry of Metal CVD, Kodas TT, Hamden-Smith MJ (eds), VCH, Weinheim, Germany... 

Bessonov AA, Morozova NB, Gelfond NV, Semyannikov PP, Trubin SV, Shevtsov YV, Shubin YV, Igumenov IK (2007) Dimethylgold(III) carboxylates as new precursors for gold CVD, Surf Coat Technol, vol 201, pp9099-9103... 

Activation and conductivity at room temperature are problems that can be addressed by the incorporation of other electronic structures that increase carrier transport. Crystal morphology is an important parameter in the boron doping process to determine uncompensated acceptors (Aa-Ad) for different crystal facets as a function of doping concentration. The temperature coefficient of resistance for a CVD diamond film can be changed by boron doping. As conductivity depends on the crystal phase, the combined electromechanical properties can be exploited in sensor applications both for resistive temperature detectors and for pressure transdu-cers. " As electrical conductivity is related linearly with boron concentration, a better-controlled process may allow for the development of better semiconductor devices improving crystal quality and operating limits. ... 

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