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Disklike micelle D and disjoined disklike micelle D postulated as intermediate states in the micelle-to-vesicle transformation. Reproduced from Reference 97 with permission of lOP Publ.

DISKMATE II Rotary Extraction Station configured to illustrate sample application steps

Disks for measuring temperatures

Disks for preparing polished sections. Four composite lapping disks .

Disks of X- -fGVGlP ,

Diskus Accuhaler . Reproduced with permission from Blackwell Science.

DISl feature extraction. shows that the operator has erased certain groups of colonies that are not separable into individual features. In other cases, colonies that were overlapping in the unprocessed image have been manually separated by a tool provided in the user interface.

DISl tile mode showing the absorption spectra of the 210 mutants displayed in

Dislocated plate haptic lOL.

Dislocation arrangement next to a stress corrosion microcrack in pure copper .

Dislocation array in a low-angle tilt boundary.

Dislocation band structure. The single crystal was deformed in direction . With kind permission of Wiley and Sons

Dislocation climb produced by atom on the dislocation line moving to a nearby vacancy.

Dislocation core energies of a screw dislocation as a function of an applied pressure, for shuffle A and glide C2 cores. Values were determined from tight-binding DFTB calculations, assuming that the core radius is equal to one Burgers vector b.

Dislocation core in A1 as seen experimentally using high-resolution transmission electron microscopy .

Dislocation creation by sintering, and dislocation dispersion by annealing.

Dislocation debris beneath an indenter resulting from plastic deformation induced by indentation .

Dislocation decoration in an AgBr-NaCl interdiffusion zone. Dislocations formed by self-stress due to lattice parameter changes. The decoration density indicates the dislocation density after H. Haefke, H. Stenzel .

Dislocation densities required to fit the precursor curves as a function of the initial quasi-static yield stress.

Dislocation density at the shock front as a function of shear stress on primary slip planes.

Dislocation density in recovered Cu-8.7 Ge subject to shock compression of various peak pressures and pulse durations.

Dislocation density versus As source temperature, Pas for GaAs crystals grown by the Bridgman method. .

Dislocation etch pits produced on the faces of potassium bichromate crystals by etching with water at room temperature

Dislocation formation by cutting a slot in the body and gluing the faces formed together

Dislocation generation mechanism for GaAs on Si substrate.



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