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Cross-sectional TEM image of o-plane GaN grown on r-plane sapphire substrate with GaN Alo.sGao.sN AiN structures.

Cross-sectional TEM image of the poly-Si film formed by FLA . The region L alternatively appear in lateral crystallization direction

Cross-sectional TEM image of the Vis-Xi02 thin film photocatalyst prepared on a quartz substrate and the changes in the ratio of Ti and composition from the top surface to the inside bulk

Cross-sectional TEM image showing the presence of y-Al203 and a-Al203 after 50 h of oxidation at 950 C.

Cross-sectional TEM images of

Cross-sectional TEM images of a silica sample implanted with Ag and S

Cross-sectional TEM images of annealed polysilane films, Two-step baked Si02 film. Reproduced with permission from Ref. 24. Copyright 2007 Society for Information Display.

Cross-sectional TEM images of ceramics resulting from pyrolysis of Co-PFS at

Cross-sectional TEM images of diamine-intercalated VO, nanotubes showing a larger thickness of the lube walls and a smaller inner core. .

Cross-sectional TEM images of diamine-intercalated VO, nanotubes showing a larger thickness of the tube walls and a smaller inner core. .

Cross-sectional TEM images of GaN films on , with permission from the American Institute of Physics

Cross-sectional TEM images of high-quality 4H-AIN grown on 4H-SiC low-magnification image of 4H-AlN 4H-SiC interface.

Cross-sectional TEM images of monoamine-intercalated VO, nanotubes showing serpentine-like scrolls.

Cross-sectional TEM images of nanoporous MSSQ films prepared by SCCO2 treatment at 200 C for the closed-pore

Cross-sectional TEM images of SSEBS cast from a THF

Cross-sectional TEM images of the final film interior, perpendicular to the film surface. Head-on images are shown. Inset

Cross-sectional TEM images of the grain and dislocation structures in .

Cross-sectional TEM images of two porous layers. There are relatively few pores on the surface compared with the bulk, with the top skin layer being most clearly visible in , with permission from American Institute of Physics

Cross-sectional TEM Microcavity

Cross-sectional TEM micrograph of a BST film deposited in a dome type CVD reactor at a wafer temperature of 420 C.

Cross-sectional TEM micrograph of a GaN thin film grown with

Cross-sectional TEM micrographs from BF2 implanted pre-amorphized were observed at three different depths. Reproduced with permission from Ref. Copyright 1984 Applied

Cross-sectional TEM micrographs of A2 sols deposited on

Cross-sectional TEM micrographs of defects in SI samples processed for 5 h at 1400 K

Cross-sectional TEM micrographs, viewed in a



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