Wet Etching of GaN and Related Compounds

Material Etch solution Temp. Etch rate Bias4 Incident Ref Comments 

AIN AZ400K developer, 23-80 0.01 - 1 - - Mileham [6,17] Etch rates strongly dependent on crystal 

1 M NaOH 25 Y Pankove [18] First anodic etching of GaN. Used jet spray of electrolyte 

GaN NaOH 25 0,01 Y - Ohkubo [19] Nitrogen bubbler reduces dissolved O 

GaN H3P04 (85%) 180 0.27 - - Kim [8] Effectively removes damage layer from 

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B4.1 General remarks on III-V nitride etching B4.2 Dry etching of GaN and related compounds B4.3 Wet etching of GaN and related compounds... 

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