Dark field image weak-beam

This equation is particularly useful when setting up for weak-beam dark field imaging, to be discussed in Chapter S. 

Figure 5.19. Ewald sphere diagrams and corresponding diffraction patterns illustrating the procedures for setting up the conditions for weak beam dark field imaging using the first-order diffracted beam g. Continued, p. 160)...

Fig. 15.3 Preparation of epitaxial thin film model catalysts, (a) Electron micrograph of a Pt-AljOj model catalyst with a mean particle size of 5 nm the insets show the corresponding electron diffraction pattern and the (200) weak-beam dark-field image of a pyramidal Pt nanocrystal (b) an atomically resolved TEM micrograph of a slightly rectangular Pt particle. A structural model of a pyramidal Pt particle is presented in (c). To illustrate the epitaxial growth the NaCl substrate is also included...

Fig. 14. (a) Weak beam dark-field image of dislocations in biotite. The trace of the slip plane (S) is indicated as well as dislocations bowing out (X). [346]. (b) Dark-field image of screw dislocations in... 

Single-Particle Diffraction, Weak-Beam Dark-Field, and Topographic Images of Small Metallic Particles in Supported Catalysts... 

Kinematical and weak beam dark field (WBDF) images of dislocations... 

Fig. 3.69 Representative weak-beam dark-field (WBDF) images where dislocations Burgers vectors (b) and fault vector (Rp) of fault F were determined (transmission electron microscopy) [55], With kind permission of John Wiley and Sons...

Figure 9.1 Weak beam dark-field TEM image = 200 close to a zone axis <011>)ofF82H...

The conditions for kinematic diffraction [160] are best approximated in the weak-beam method, which consists of making a dark-field image in a weakly excited diffraction spot. The dislocation image then consists of a narrow bright line on a darker background. 

Figure 2. Dark-field weak beam TEM images of Si/SiGe/Si structures which were in-situ implanted with Ge and furnace annealed at 600 °C (a), 650 C (b), 700 C (c) or 750 C (d) for 10 min in a dry N2 [5]. Note that the main nucleation of voids and annealing of as-implanted defects take place in the temperature range 650-750 "C.

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