Various Implementations of Exclusion Photoconductors

Finally, Fig. 3.6c shows an exclusion stmcture with a mask for noise reduction. The opaque mask is deposited over the photodetector area where exclusion effects are less pronounced or completely absent. In this manner the largest contribution to photocurrent is from the area with largest carrier depletion. Voltage readout electrodes are placed in the part with maximum depletion, thus further reducing the influence of other parts of the detector. This configmation is used with electronic circuitry that further reduces noise. 

3 Approximate Analytic Calculation of Exclusion Detector Parameters 

The further text presents an approximate consideration of transport phenomena within an exclusion device. Besides enabling us to simply determine the main parameters of exclusion stmctures, it also gives us a better insight in operation of Auger suppressed devices. It follows the approach of White [50], albeit with certain modifications that will later enable us to obtain some additional parameters. 

The expression for current density (3.58) directly gives the electric field intensity 

3 Charge Carrier Management (Thermal Noise Engineering) 

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