Uniaxial lOO -growth

It should be noted here that the measurements of growth orientation is influenced by the bending of the Si surface due to diamond growth [81], and thus a proper correction is needed to obtain the true values. 

In order to describe the crystal morphology. Wild et al. [82] defined a growth parameter a by  

The a-parameter can be a 1 and a 3, but the crystal shape is no longer cubo-octahedral. 

The tilt angle of the (100) face, Tioo, from the direction of the fastest growth v is expressed by  

There are some methods to evaluate o -values experimentally [22, 86, 87]. The first method is given by Maeda et al. [86], where the a-parameter for specific CVD conditions is derived from the change in the crystal shape between an initial cubo-octahedral diamond particle of a = 3/2 and the same particle after the growth. 

---