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Tungsten modeling

The above surface model is quite as useful in its way as the clean tungsten model. Most of the phenomena occurring at the dirty surface of a semiconductor in a gas, a liquid dielectric, or an electrolyte can be understood in terms of this model. The semiconductor must come to equilibrium with its surface. A charge layer on the surface and an equal and opposite space charge layer in the semiconductor is the result. The surface can be changed all the way from very p-typa to very n-type, depending on the particular surface chemistry involved regardless of whether the interior is n or p type. [Pg.13]

Electron Transfer Mechanisms in Molybdenum and Tungsten Model Compounds... [Pg.80]

M. J. Byrnes and M. H. Chisholm, Thienyl carboxylate Ugands bound to M2 quadruple bonds involving molybdenum and tungsten. Models for dimetaUated polythiophenes, Chem. Common., 2040-2041 (2002). [Pg.316]

Vahle, A., Hiibener, S., Funke, H., Eichler, B., lost, D.T., Tiirler, A., Briichle, W., Jager, E. Gas chromatographic smdies of oxide and hydroxide species of tungsten—model experiments with respect to the physico-chemical characterization of seaborgium (element 106). Radiochim. Acta 84, 43-51 (1999)... [Pg.475]


See other pages where Tungsten modeling is mentioned: [Pg.238]    [Pg.329]    [Pg.238]    [Pg.237]    [Pg.587]    [Pg.14]    [Pg.83]    [Pg.97]    [Pg.129]    [Pg.4266]   
See also in sourсe #XX -- [ Pg.126 , Pg.127 ]




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