Tungsten carbides chemical reactivity

Silicon carbide can be made by chemical vapor deposition on a substrate heated to around 1300°C (DeBolt et al, 1974). The substrate can be tungsten or carbon. The reactive gaseous mixture contains hydrogen and alkyl silanes. Typically, a gaseous mixture consisting of 70% hydrogen and 30% silanes is introduced at the... 

Chemical interferences can be eliminated in most cases by the use of MET (see below). Perhaps the most widely studied interference is the chloride interference for volatile elements such as lead and thallium, which causes vaporization of these elements at low temperatures (500°C). Although the mechanism of this interference has been widely studied, controversy still exists about its exact cause. Chemical interferences are also problematic for involatile elements. For example, metals that form involatile carbides, such as silicon, tantalum, and tungsten, are very difficult to determine by ETA-AAS because of their reactivity with the graphite tube. 

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