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Tin monosulfide

Brownson JRS, Georges C, Larramona G, Jacob A, Delatouche B, Levy-Clement C (2008) Chemistry of tin monosulfide (8-SnS) electrodeposition effects of pH and temperature with tartaric acid. J Electrochem Soc 155 D40-D46... [Pg.148]

Tin monosulfide (SnS) is a promising material for thin-film photovoltaic applications. The semiconductor has an indirect band gap of 1.1 eV and a direct band gap of 1.3 eV. Furthermore, it shows intrinsic p-type conductivity. Recently, Steichen et al. [38] reported a direct electrodeposition of p-type SnS on molybdenum in l-butyl-3-methylimidazolium dicyanamide ([C4mim][N(CN)2]) iraiic liquid containing elemental sulfur and SnCl2 above 100 °C. The authors proposed that... [Pg.29]

See other pages where Tin monosulfide is mentioned: [Pg.357]    [Pg.380]    [Pg.1174]    [Pg.1385]    [Pg.1551]    [Pg.1552]    [Pg.1917]    [Pg.1917]    [Pg.357]    [Pg.380]    [Pg.357]    [Pg.380]    [Pg.1174]    [Pg.1385]    [Pg.1551]    [Pg.1552]    [Pg.1917]    [Pg.1917]    [Pg.357]    [Pg.380]    [Pg.118]    [Pg.121]    [Pg.81]    [Pg.524]    [Pg.10]   
See also in sourсe #XX -- [ Pg.13 ]

See also in sourсe #XX -- [ Pg.357 ]



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