Three-step process Growth of HOD films on carburized Si

THREE-STEP PROCESS GROWTH OF HOD FILMS ON CARBURIZED Si(lOO) 

In Ref. [261], a process optimization for oriented diamond nuclei was done using a software for statistical experimental design [262] (design for experimental method). The process parameters for BEN and the oriented growth in the three-step process are listed in Table H.3. The substrate used was Si(lOO), which had been carburized for 3h under the following conditions P = 20Torr, Pm=1000W, 7 s = 900°C, and 

The distribution of azimuthal and tilt angles of (100) faces in HOD films are usually studied by XPF measurements (see Section 5.1) [4, 263]. In Ref [5], a 30-pm thick HOD film was synthesized, which had (100) faces with 5-10 pm edge lengths at the film surface. The FWHMs of XPF for (100) and (022) diffractions were 8° and 12°, respectively. The FWHM of Raman band at 1332 cm was about 8 cm .  

For the three film thicknesses, (x) and (0) have their minima when the thickness was 20 pm. The FWHM of X-ray rocking curve for the 100-pm thick HOD film was 3.1°. The fact that (x and ( / ) increased between the film thickness of 20 to 100 pm is apparently in contradiction with the van der Drift s theory [77], in which the orientational order should become better as the film thickness increases. The authors of Ref [264] speculated that this was due to (i) the increase in the 

Pressure 25Torr 15Torr 15Torr 15Torr 25Torr 

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Three-step process Growth of HOD films on carburized Si(lOO) 166... 

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