Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Thermally stimulated capacitance

Nonisothermal capacitance methods employ heating programs T(t) and are known as thermally stimulated capacitance (TSCAP) [5]. [Pg.6]

Fig. 8. Energy below the conduction band of levels reported in the literature for GaAs. Arrangement and notations are the same as for Figs. 4 and 5. Notations not defined there are epitaxial layer on semi-insulating substrate (EPI/SI), boat-grown (BG), vapor phase epitaxial layer on semi-insulating substrate (VPE/SI), melt-grown (M), molecular beam epitaxy (MBE), horizontal Bridgman (HB), irradiated with 1-MeV electrons or rays (1-MeV e, y), thermally stimulated capacitance (TSCAP), photoluminescence excitation (PLE), and deep level optical spectroscopy (DLOS). Fig. 8. Energy below the conduction band of levels reported in the literature for GaAs. Arrangement and notations are the same as for Figs. 4 and 5. Notations not defined there are epitaxial layer on semi-insulating substrate (EPI/SI), boat-grown (BG), vapor phase epitaxial layer on semi-insulating substrate (VPE/SI), melt-grown (M), molecular beam epitaxy (MBE), horizontal Bridgman (HB), irradiated with 1-MeV electrons or rays (1-MeV e, y), thermally stimulated capacitance (TSCAP), photoluminescence excitation (PLE), and deep level optical spectroscopy (DLOS).
It must also be mentioned that evidence for USTDs with ionization energies down to 23 mcV has been obtained by low-temperature admittance spectroscopy and thermally-stimulated capacitance measurements in standard CZ silicon samples annealed at 470°C in oxygen ambient for up to 500 h [1],... [Pg.242]

The techniques of thermally stimulated capacitance (TSCAP) and thermally stimulated current (TSC) are the simplest methods for surveying the... [Pg.59]

Fig. 35. Calculated set of thermally stimulated capacitance (TSCAP) scans for the quasidiscrete-level g(E) of Fig. 16 under voltage pulse and laser pulse filling conditions as described in the text. Fig. 35. Calculated set of thermally stimulated capacitance (TSCAP) scans for the quasidiscrete-level g(E) of Fig. 16 under voltage pulse and laser pulse filling conditions as described in the text.
Petroff and Lang (1977) combined DLTS with scanning electron microscopy in a method that allows spatial imaging of deep states in the plane of a junction. The scanned electron beam is pulsed on and off and the resulting thermally stimulated current or capacitance transient is analyzed using the usual DLTS methods. [Pg.18]

Fig. 4. Energy below the conduction band of levels reported in the literature for GaP. States are arranged from top to bottom chronologically, then by author. At the left is an indication of the method of sample growth or preparation liquid phase epitaxy (LPE), liquid encapsulated Czochralski (LEC), irradiated with 1-MeV electrons (1-MeV e), and vapor phase epitaxy (VPE). Next to this the experimental method is listed photoluminescence (PL), photoluminescence decay time (PLD), junction photocurrent (PCUR), photocapacitance (PCAP), transient capacitance (TCAP), thermally stimulated current (TSC), transient junction dark current (TC), deep level transient spectroscopy (DLTS), photoconductivity (PC), and optical absorption (OA). Fig. 4. Energy below the conduction band of levels reported in the literature for GaP. States are arranged from top to bottom chronologically, then by author. At the left is an indication of the method of sample growth or preparation liquid phase epitaxy (LPE), liquid encapsulated Czochralski (LEC), irradiated with 1-MeV electrons (1-MeV e), and vapor phase epitaxy (VPE). Next to this the experimental method is listed photoluminescence (PL), photoluminescence decay time (PLD), junction photocurrent (PCUR), photocapacitance (PCAP), transient capacitance (TCAP), thermally stimulated current (TSC), transient junction dark current (TC), deep level transient spectroscopy (DLTS), photoconductivity (PC), and optical absorption (OA).
Non-thermal RF discharges can be either capacitively (CCP) or inductively (ICP) coupled (Fig. 4-72). The CCP discharges provide an electromagnetic field by electrodes located either inside or outside of the chamber (Fig. 4-72a,b). They primarily stimulate an electric field, facilitating ignition. An electromagnetic field in the ICP discharges is induced by the... [Pg.215]


See other pages where Thermally stimulated capacitance is mentioned: [Pg.82]    [Pg.67]    [Pg.10]    [Pg.51]    [Pg.59]    [Pg.392]    [Pg.82]    [Pg.67]    [Pg.10]    [Pg.51]    [Pg.59]    [Pg.392]    [Pg.7]    [Pg.33]    [Pg.376]    [Pg.188]    [Pg.1]    [Pg.521]    [Pg.349]    [Pg.616]    [Pg.8]   
See also in sourсe #XX -- [ Pg.51 , Pg.59 , Pg.60 , Pg.61 , Pg.62 , Pg.63 , Pg.64 ]




SEARCH



Thermal capacitance

Thermal stimulation

Thermally stimulated capacitance (TSCap

© 2024 chempedia.info