Ternary Non-oxide Semiconductors

Upon irradiation of n-type GaP in alkaline solution, electron flow from GaP (bandgap = 2.24 eV) to the counter electrode leads to photoanodic dissolution by the following reactions  

Ga)(Se,S)2 thin films prepared by electrodeposition [78] have a bandgap of approximately 2.0 eV, and demonstrate photoelectrochemical hydrogen production in 0.1 M Na2S03 in pH 10 buffer. Similar work has also been carried out using p-Culni xGaxSe2 thin film photoelectrodes in 0.5 M H2SO4 [143], 

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