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Temperature dependence of carrier concentration

The gap Eq is not the minimum gap Eg which determines the absorption edge and temperature dependence of carrier concentration, but the average gap corresponding to the separation of the bonding and antibonding states in the covalent bond picture. It has fundamental importance for many basic properties of the solid and appears in the theories of the relation between the chemical and optical properties of crystals (Phillips (1970)). [Pg.203]

Fig.tr.1-3tr 3C-S1C. Temperature dependence of carrier concentration for n-type films grown by CVD on Si(lOO) substrates [1.25]. Solid lines, calculated values. Si/C = ratio of source gases... [Pg.596]

Fig. 17 Temperature dependence of the hole mobility measured in an FET with (a) pentacene and (b) P3HT as active layers. Parameter Is the gate voltage. Data fitting using the Fishchuk et al. theory in [102] yields values for the mobility and the disorder potential extrapolated to zero electric field and zero carrier concentration. To is the Meyer-Nedel temperature (see text). From [102] with permission. Copyright (2010) by the American Institute of Physics... Fig. 17 Temperature dependence of the hole mobility measured in an FET with (a) pentacene and (b) P3HT as active layers. Parameter Is the gate voltage. Data fitting using the Fishchuk et al. theory in [102] yields values for the mobility and the disorder potential extrapolated to zero electric field and zero carrier concentration. To is the Meyer-Nedel temperature (see text). From [102] with permission. Copyright (2010) by the American Institute of Physics...
Figure 6.15 Temperature dependence of charge carrier concentration of -type extrinsic germanium with two different As impurity levels. From K. M. Ralls, T. H. Courtney, and J. Wulff, Introduction to Materials Science and Engineering. Copyright 1976 by lohn Wiley Sons, Inc. This material is used by permission lohn Wiley Sons, Inc. Figure 6.15 Temperature dependence of charge carrier concentration of -type extrinsic germanium with two different As impurity levels. From K. M. Ralls, T. H. Courtney, and J. Wulff, Introduction to Materials Science and Engineering. Copyright 1976 by lohn Wiley Sons, Inc. This material is used by permission lohn Wiley Sons, Inc.
By studying the temperature dependence of the carrier concentration in a semiconductor sample, several things can be learned about its properties. Figure E10.1 shows the free carrier density (n +p) of a semiconductor sample measured as a function of temperature and plotted in a useful form. Based on the data in this plot, you should be able to discern ... [Pg.77]

Fig. 7.16. Growth temperature-dependent reduction of carrier concentration (300 K) of ZnO films on sapphire due to introduction of Ce02 buffer layers. The growth temperature is about 50° C lower as the given heater temperature. Hall measurements by H. von Wenckstern... Fig. 7.16. Growth temperature-dependent reduction of carrier concentration (300 K) of ZnO films on sapphire due to introduction of Ce02 buffer layers. The growth temperature is about 50° C lower as the given heater temperature. Hall measurements by H. von Wenckstern...

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See also in sourсe #XX -- [ Pg.67 ]

See also in sourсe #XX -- [ Pg.110 ]




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