Structures 1 Silicon Dioxide as Insulator

2 ELECTRICAL CHARACTERISATION OF MIS STRUCTURES 6.2.1. Silicon dioxide as insulator 

3 X 10 cm 3- The value of Vf for this device (+17 V) is high, and we consider that this is due to the presence of charged impurities present in the SiC 2 layer (similar values for Vf are found for devices fabricated on the same substrate batch). The fall-ofl in capacitance with frequency is untypically rapid for this device for which the contact resistances are high. 

In addition to the differential capacitance we have also measured the conductance, G(co) this can give sensitive indication of the presence of dissipative processes associated with the charge injection process [67]. For example, if there are trap states, possibly associated with the interface, Aese give a peak in G(o)) as (d is taken through the characteristic 

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