SSIMS depth profiling

Examples of SSIMS depth profiles obtained from ceramics and glasses have been discussed (c.g.. Fig. 19) [104.107]. Examples of XPS depth profiles obtained from similar titanate fracture surfaces are shown in Fig. 21 ] 104]. An enhancement of Cs, A1 and. to a minor extent. Ca and Mo on the fresh fracture face, and to a depth of approximately 5 nm, is inferred from these profiles. Exposure to water removes the surface enhancement. 

Figure 19. SSIMS depth profile of a fresh fracture face of the ceramic syn-roc C, demonstrating enhancement of Cs and Na, but not Ca and Ti. in the intergranular region [104,1071.

Depth Profiling. Unlike SSIMS, ISS is not inherently destructive under normal conditions of ojjeration (i.e.. He at a few kiloelectronvolts and 1-10 nA) since the. sputtering rate is negligible. If information in depth is required, then surface erosion must be introduced, as for XPS and AES. One obvious way of performing depth profiling is to use the same primary ion for both ISS and sputtering, but at quite different power densities for the two operations. Thus Rossi et al. 

---