Space charge layers, schematic diagram

Figure 17.14 Schematic diagram (top) ofthe buik (center), space charge iayers (frame), and grain boundaries (outer dark lines) in a poiycrystaiiine materiai. Shown beiow are Mott-Schottky oxygen vacancy profiles for AO values of +0.5, +0.3, 0, and —0.1 V in the space charge layer.

Fig. 6 Schematic diagrams showing charge and potential distribution in an n-semiconductor-electrolyte interface, (a) Variation in charge distribution within the space charge region and in Gouy layer, (b) Variation in potential within the space charge region, and electrolyte. In Helmholtz layer it changes linearly, whereas in Gouy layer it decreases exponentially.

Figure 11. A schematic diagram to show the potential drop in the space charge region of width, Wy in the p-type semiconductor and that in Helmholtz layer.

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