Source Action of Sharp Interfaces

7Note that this process will cause the boundary to move relative to inert markers embedded in either crystal adjoining the boundary. 

and C in vicinal (001) twist grain boundary in Au. Static array of screw dislocations in background accommodates the twist deviation of the vicinal boundary shown from the crystal misorientation of the nearby singular twist boundary to which it is vicinal. Excess selfinterstitial defects were produced m the specimen by fast-ion irradiation and were destroyed at the grain-boundary dislocations by climb, causing the boundary to act as a defect sink, (a) Prior to irradiation, (b) Same area as in (a) after irradiation, (c) Diagram showing the extent of the climb. From Komer et al. [24], 

Available experimental information about the source (or sink) efficiency of heterophase interfaces for fluxes of solute atoms indicates that low efficiencies are often associated with a lack of appropriate ledge defects [2]. 

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