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Solute property detector, high-performance

Mercury cadmium teiluride (HgCdTe) is a direct bandgap semiconductor widely used as a material for infrared detectors due to his narrow variable band gap. The achievement of high-performance detectors depends critically on a low surface recombination velocity of the minority carriers. The chemical growth of a passivation oxidized superficial layer in an aqueous Fe(CN)g3- basic solution is studied in this work. The depth profiles of the different elements in the oxidized layer superficial layer and its thickness are studied by X-ray photoelectron spectroscopy. The electrical properties of the interface are evaluated from MIS devices. The conditions of oxidation have been optimized. [Pg.385]

See other pages where Solute property detector, high-performance is mentioned: [Pg.25]    [Pg.5]    [Pg.120]    [Pg.51]    [Pg.1438]    [Pg.160]    [Pg.158]    [Pg.1291]    [Pg.9]    [Pg.1366]    [Pg.51]    [Pg.238]    [Pg.550]    [Pg.115]    [Pg.336]    [Pg.423]    [Pg.136]    [Pg.16]    [Pg.246]    [Pg.780]    [Pg.241]    [Pg.171]    [Pg.487]   


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