Silicon nitride and oxynitride films

IR data (vSiN 820-833 cm ) were used to characterise SiN films formed by a variety of CVD techniques. The IR spectra of amorphous SiOxN3 thin films included vSiO and vSiN features at 1105 cm", 865 cm respectively Two other reports have been made of IR spectra of CVD-produced silicon nitride and oxynitride films " " The FTIR spectrum of an SisN4 powder shows a feature at 1200 cm corresponding to the presence of Si-O units ... 

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