Silicon carbide lattice mismatch

Heteroepitaxy of diamond on c-BN has been successful (e.g., 105,106) due to the identical crystal stractures with a close lattice match (only 1.3% mismatch) between the two and the high surface energy ( 4.8 J/m ) of the c-BN (111) plane. The heteroepitaxy of diamond on silicon could be the key to electronic device apphcations of diamond. However, diamond has a large lattice mismatch with silicon (52%) and a much higher surface energy than silicon (6 J/m for diamond, 1.5 J/m for silicon), hi spite of this, there are several reports of oriented diamond film deposition on substrates like silicon, silicon carbide, etc., by various techniques (e.g., 108-112). 

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