Silicon activation energies

Fig. 10. DLTS spectrum for a Schottky-barrier diode on n-type ( 7 x 1015 P/cm3) silicon after hydrogenation (150°C, 50 min). The emission rate window e0 corresponds to delay times of 0.5 and 2.5 ms. Each peak is labeled with the measured activation energy for thermal emission of electrons (Johnson et al., 1987a).

DIFFUSION COEFFICIENT ACTIVATION ENERGY AND PREEXPONENTIAL FACTOR FOR UNDOPED AMORPHOUS SILICON... 

The product of the dissolution process of silicon electrodes in HF is fluosilicic acid, H2SiF6. In contrast to HF, H2SiF6 is mostly (75%) dissociated into Sily and 2H+ in aqueous solution at RT. The diffusion coefficient of the SiF at RT decreases from 1.2X10 5 cmV1 for 0.83 mol 1 1 to 0.45 cm2s 1 for 2.5 moll-1, with values of activation energy around 0.2 eV [We7]. 

Fig. 4.10 Critical current density JPS of (100) oriented silicon electrodes for different HF concentrations plotted versus the inverse absolute temperature 1/71 Arrhenius-type behavior, with an activation energy of 0.345 eV, is observed.

Table III Etch Rates and Activation Energies for Silicon Etching in F-Source Plasmas...

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