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Pt Implanted with 45 keV Si Ions

To calculate the Pt dose required to reach this maximum concentration, the parameter is estimated to be 29 nm for 45 keV Pt in Si. To reach 90% of the steady-state concentration, a thickness of 4i p or 116 nm, has to be sputtered. This thickness corresponds to 5.8 x 10 atoms cm (based on an atomic density [Pg.172]


See other pages where Pt Implanted with 45 keV Si Ions is mentioned: [Pg.171]    [Pg.171]   


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