Si-H complex

Detailed information about the evolution of Si-H complexes in H ion-implanted silicon were gained by the infrared vibrational studies of Weldon et al. (1997) and Chabal et al. (1999). Implanted H atoms form complexes of the form VxHy or IxHy, where V denotes a silicon vacancy and / denotes silicon interstitial. Also observed was the so-called H2 complex, a hydrogen molecule formation in which one H atom is located at the bond-centered site and the other at the antibond site, with a silicon lattice atom residing between the H2 bonds. Upon annealing of the H ion-implanted samples, the IR studies uncover a net loss of bound hydrogen... 

Finally for Si 111, Appelbaum and Hamann [209] calculated a Si—H bond force constant of 0.175 a.u. and the corresponding surface phonon was observed experimentally using ELS by Froitzheim et al. [214]. By treating the Si—H complex as a binary molecule, they derived a bond force constant from their measured data of 0.158 a.u., in reasonable agreement with the predicted value. 

The ri2-H2 or f/2-Si-H complexes could be relevant in Eq. (9.60), although the isolable complex Os(SiEt3)Cl(H2XCOXP,Pr3)2 proposed as an intermediate contains f/2-H2, which is favored over the OsH(if2-HSiEt3) structure in theoretical studies also (see Chapter 4). A related cationic complex [OsH(H2XCOXP Pr 3)2]+ acts as a template for a noncatalytic C-C coupling reaction between methyl pro-piolate and l,l-diphenyl-2-propyn-l-ol.116... 

Detailed information about the evolution of Si-H complexes in H ion-implanted silicon were gained by the infrared vibrational studies of Weldon et al. 

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