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Serial flow pattern

Bifurcation structures are self-replicating patterns which serially branch channels until a multitude is reached. In this way, a main stream can be split into many substreams just relying on flow symmetry. These sub-streams can be contacted in an interdigital-type arrangement with the sub-streams of a second feed and then be guided into a main channel or into an inverse bifurcation structure. [Pg.99]

Similar upscaling techniques, motivated by the need to reduce grid block number, are important in practice. But the equivalent permeabilities within any reservoir will change if the reservoir is produced by different arrangements or patterns of wells, because the parallel and serial nature of the flow has changed. Upscaled quantities are not properties of the formation but are also related to the production method. However, several simulators compute fixed upscaled properties and use them in contrasting production scenarios. [Pg.4]

Fig. 2 Process flow (a) Starting Material, (b)Deposit SisN (c)Deposit poly-silicon, (d) Deposit Al, (e) Resist coating, (f) Soft bake, (g) Exposure mask, (h) Develop resist (i) Poly-silicon RIE, (j) Alum etch and stripe resist, ion(k) Dry oxidation, (1) Poly-silicon nanogap pattern with pad Pt/Au fabrication( Electrical checking of the device can be performed on the fabricated pad)(Repeat step (a) to (j) for mask 2). Fig. 3 shows the circuit after serial impedance is measured, a simple resistor model is developed representing the substrate and polysilicon layer. The capacitor also found in series to describe the device with no liquid test... Fig. 2 Process flow (a) Starting Material, (b)Deposit SisN (c)Deposit poly-silicon, (d) Deposit Al, (e) Resist coating, (f) Soft bake, (g) Exposure mask, (h) Develop resist (i) Poly-silicon RIE, (j) Alum etch and stripe resist, ion(k) Dry oxidation, (1) Poly-silicon nanogap pattern with pad Pt/Au fabrication( Electrical checking of the device can be performed on the fabricated pad)(Repeat step (a) to (j) for mask 2). Fig. 3 shows the circuit after serial impedance is measured, a simple resistor model is developed representing the substrate and polysilicon layer. The capacitor also found in series to describe the device with no liquid test...

See other pages where Serial flow pattern is mentioned: [Pg.4]    [Pg.52]    [Pg.2020]    [Pg.1192]    [Pg.97]    [Pg.208]    [Pg.786]    [Pg.441]    [Pg.197]    [Pg.457]    [Pg.316]    [Pg.89]    [Pg.288]    [Pg.293]    [Pg.325]    [Pg.329]    [Pg.56]    [Pg.767]    [Pg.812]    [Pg.197]    [Pg.23]    [Pg.148]    [Pg.148]   
See also in sourсe #XX -- [ Pg.259 ]




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