Semipolar LEDs

Since then, much effort has been expended on proving the advantage of nonpolar/semipolar LEDs over c-plane LEDs. The use of nonpolar nitrides potentially solves the problem of the large piezoelectric field, because no piezoelectric field is expected in the nonpolar heterostructures. 

The superior optical properties of our microfacet QWs and reports on planar heteroepitaxial films lead us to heheve that if planar structures are grown on high-quality GaN substrates, then device performances could he drastically improved. In this section, we describe the MOVPE of GaN and InGaN/GaN QWs on semipolar (1122) GaN substrates, their fundamental optical properties, and the fabrication of LEDs. 

In summary, we have demonstrated recent progress on the microfacet QWs and planar, semipolar QWs and LEDs. The 1122 plane plays a key role in both structures. The major achievements are as follows (i) the 1122 microfacet QWs with a high IQE due to weak internal electric fields, (ii) white... 

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