Semiconductors refractive index

Semiconductor refractive index, 14 846 Semiconductor structures, chemically perfect, 9 730... 

Ipitek material whose refractive index varies with temperature A temperature-sensitive semiconductor refractive-index probes Four to 28 channels temperature probe... 

The amount of light that imdergoes TIR can be reduced by reducing the difference between the refractive indices at the semiconductor surface. As the semiconductor refractive index is a material characteristic, this is achieved by encapsulating the LED with an encapsulating material having a higher refractive index. 

Refraction phenomena, nonlinear, 17 454 Refractive index (RI), 11 131 15 187 of compound semiconductors, 22 150t, 151... 

The immune biosensor analysis was carried out in the SPR-4 M device produced by the Institute of Physics of Semiconductors of the Ukrainian National Academy of Sciences. SPR spectroscopy was carried out in the Kretschmann configuration using He-Ne laser ( i=632.8 nm), goniometer (G-5 M), glass prism (the angle at the basis 68°) and photodiode (FD 263). The optical contact between the prism and the metallic layer was achieved by the application of polyphenyl ether (refractive index n= 1.62). 

The supporting medium (aqueous or organic solvents membrane-mimetic compartments) also has a profound influence on the optical and electro-optical properties of nanosized semiconductor particles. This dielectric confinement (or local field effect) originates, primarily, in the difference between the refractive indices of semiconductor particles and the surrounding medium [573, 604], In general, the refractive index of the medium is lower than that of the semiconductor particle, which enhances the local electric field adjacent to the semiconductor particle surface as compared with the incident field intensity. Dielectric confinement of semiconductor particles also manifests in altered optical and electro-optical behavior. 

Here n0) = ntp + inis the complex refractive index of the medium (n(/ 2 > 0) and j takes two values j = 1 corresponds to the electrolyte solution, = 2 to the semiconductor. The solution of Eq. (51) together with matching conditions at the interface completely describes the distribution of U). The change in the shape of the surface relief X(y,z,t) due to etching alters this distribu-... 

Here c is the velocity of light, n is the complex refractive index in the semiconductor bulk... 

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