Semiconductor Alloy Bowing Parameters

Alloy Bowinq Parameter (eV) Alloy Bowinq Parameter (eV)  

All values are for the zincblende structure of the alloy. Most values and especially GaAsN, and AlGaAs and AllnP F-point values are composition dependent. Data are from Reference [2].  

NOTE while simple bowing parameters represent convenient ways to discuss and estimate composition dependences of energy gaps, they are often significant oversimplifications of the actual situation. 

One of the most striking features of the bowing parameter values in Table 6.1 is the negative value for the direct gap in AlGaAs and AllnP. This is particularly 

Band gap bowing occurs in ternary and quaternary alloys as it does in binary and pseudobinary alloys. The behavior of quaternary alloys and can be treated in the same way. For a typical quaternary of the form Ai xBxCyDi y, Equation 6.13 for the energy of a specific part of the band stractrrre (for example, the direct gap) can be generalized to [2]  

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