Schottky electroluminescence

The first attempt to utilize the luminescent property of a-Si H for light-emitting devices can be traced back to the year 1976, when Pankove and Carlson (1976) demonstrated the electroluminescence in p-i-n and Schottky junctions of a-Si H at low temperatures. This was followed by... 

MAJOR APPLICATIONS Polythiophenes and the substituted polythiophenes are utilized in a variety of applications where their conducting properties pose an advantage. They are presently used as antistatic coatings and films. Research is being done to explore their use in electrochromic and electroluminescent devices. They have also shown some promise as material for biosensors and storage batteries. Used in making Schottky barrier diodes and field effect transistors. 

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