Scatter, bulk defects

The size, shape, and distribution of the surface features or bulk defects determine how much light is scattered versus how much is reflected in a specular fashion. In addition, the distribution and size of these features determine the angular distribution of the scatter. Measurements of how the material scatters a well-characterized beam of hght, such as a laser beam, can therefore be used to determine the size and distribution of the scattering features. 

The diSuse scatter arises because dislocations are defects which rotate the lattice locally in either direction. This gives rise to scatter, from near-core regions, which is not travelling in quite the same direction as the diffraction from the bulk of the crystal. This adds kinematically (i.e. in intensity not amplitude) and gives a broad, shallow peak that mnst be centred on the Bragg peak of the dislocated layer or substrate since all the local rotations are centred on the lattice itself. We can model the diffuse scatter quite well by a Gaussian or a Lorentzian function of the form ... 

It should be noted that the carrier mobility in nanowires is lower than that in bulk single-crystalline material due to possible scattering at wire and grain boundaries, uncontrolled impurities, and lattice defects. The overall effect of this additional scattering is taken into account by Matthiessen s rule (Ashcroft and Mermin, 1976b),... 

Lattice dynamics in bulk perovskite oxide ferroelectrics has been investigated for several decades using neutron scattering [71-77], far infrared spectroscopy [78-83], and Raman scattering. Raman spectroscopy is one of the most powerful analytical techniques for studying the lattice vibrations and other elementary excitations in solids providing important information about the stmcture, composition, strain, defects, and phase transitions. This technique was successfully applied to many ferroelectric materials, such as bulk perovskite oxides barium titanate (BaTiOs), strontium titanate (SrTiOs), lead titanate (PbTiOs) [84-88], and others. 

The main message from this class of experiments is that the details of the surface do affect the carrier relaxation. In the presence of surface defects associated with conventional surface preparation, the carrier relaxation in the surface region is exceptionally fast relative to bulk processes (10-100 fs dynamics). As can be seen by comparing the dynamics shown in Fig. 2.9, the effect of the surface is to increase the rate of relaxation and thermalisation. The asymmetry, more anharmonic character to the surface modes and increased mixing of states at defect sites all conspire to speed up the relaxation processes. With proper attention to surface structure, it is possible to intervene in the relaxation process and achieve carrier and phonon scattering rates that approach bulk processes. In this limit, 200 fs to picosecond dynamics define the operative time scales. 

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