Sapphire optical transmittance

The fabrication process of vanadium oxide (VO2) has also been studied using RBS/C. Since optieal and electrical properties of VO2 are dramatically changed at 68°C due to phase transition, VO2 is regarded as one of the candidates for thermally activated electronic or optical switching devices for optieal fibers or sensors. To obtain the desired properties, the development of the fabrication process for very thin films, without crystalline defects on various substrates, is required. Single-crystalline VO2 thin films on (0001) plane of a sapphire substrate have been synthesized by a laser ablation method. The quality of VO2 was examined by X-ray diffraction and RBS/C method. The eleetrieal resistanee and the optical transmittance of the VO2 film were measured under inereasing and deereasing temperatures. At a temperature of 68 °C, an abrupt transition of resistanee from metal to... 

The temperature dependences of the electrical conductivity and of the thermoelectric power of boron films deposited on sapphire substrates have been measured. The energy band gap and optical constant (n, k) of boron have been estimated from the results for optical transmittance and reflectance in the visible and infrared spectral regions. 

Optical material Transmittance range (nm) Refractive index at 600 nm Relative rupture strength (sapphire = 100)... 

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