Rod-like defects

Wagner compared structural and electrical properties of polycrystalline Si layers grown by CVD or LPE (In melt, 947°C, 0.12 pm min-1) with similar grain boundary structures [20]. The measured minority carrier lifetime was always higher and the recombination strength of the defects was smaller in the LPE layers than in the CVD layers. They attributed this to the higher purity of the LPE layer and its lower density of defects (rod-like defects). 

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