Resistivity vs. thickness

However, it is not so easy to derive a similar functional relationship between the electrode resistance and its thickness that is why a computer simulation has been carried out to study the dependence of electrode resistance on its thickness. In the calculations, Rm was chosen as a unit resistance, and the distance between the NP tiers (4r) was chosen as a unit thickness. Figure 3 illustrates the results of calculations at various ratios between Re, R and Rm, namely, R, = Re = 0.002Rm (curve I ) / , = 0.004/ ,. R,. = 0.000 li m (curve 2). In these and other cases checked, the plots of resistance vs. thickness display a sharp drop followed by a slower rise after reaching a minimum. Let us consider these regions in more detail. 

Figure 14. Resistance vs. thickness for a series of papers with different basis weight. The intercept of the minimum values gives the contact resistance and the slope is proportional to the resistivity of the paper. (Reproduced, with permission, from Ref. 16. Copyright 1981, American Institute of Physics.)...

Figure 6.13. (A) Conduction mechanisms in electrostatic assembled it-stacked materials (1) electron hopping involving the ruthenium and (2) M and M sites, (3) electronic conduction through the porphyrin it-stacks, and (4) hole transfer to a Ru(II) complex followed by electronic conduction through the porphyrin it-stack (B) Randles type equivalent drcuit proposed for the films (C) Nyquist diagrams of a modified electtrode (F = 3.5 X 10 molcm ) at 0.72 and 0.92 V and (D) low-frequency capacitance vs. potential and charge-transfer resistance vs. thickness (inset), for electrostatic assembled CoTRP/ZnTPPS films.

FIGURE 10.2 Area-specific resistance vs. electrolyte thickness for YSZ, CGO, and LSMG at 500 and 600°C. 

Figure 5.34. Resistivity vs. adhesive layer thickness. [Adapted, by permission, from Wei Y, Sancaktar E, J.

The preferentially oriented films on YSZ substrates exhibit extremely sharp resistive transition with zero resistance obtained at temperatures of 90 K and above. Typical resistivity vs temperature results are shown in Fig. 6 for a 1 pm thick film. The 10-90% transition width is 1.5 K and zero resistance is obtained at 91.4 K. On some films we have observed zero resistance at temperature as high as 94 K, which is one of the highest values reported for films of 1-2-3. When the films are reacted for a longer period to convert all the BaFj, the transition gets broader, with zero resistance obtained at 80-85 K. The critical current density (J,) of films with T,(R=0) higher than 90 K is about 10 A/cm at 77 K and 10< A/cm at 4 K. Films with broader transitions, which are also less textured, have critical current densities an order of magnitude lower. 

Figure 12.14 Resistance vs. in-plane magnetic field curves at room temperature for electrodeposited (30 repeats) Co (2 nm)/Cu (3 nm) on conductive polypyrrole film (thickness 5 mm). (Reprinted with permission from Journal of Materials Chemistry, A flexible giant magnetoresistance sensor prepared completely by electrochemical synthesis by F. Van, G. Xue and F. Wan, 12, 2606-2608. Copyright (2002) Royal Society of Chemistry)...

FIGURE 13.4 Ti ace resistance vs. trace width and thickness. (Prepared by Ritch Tech.)... 

Fig. 37.4 Resistivity vs. temperature curves for a 100/im wide X 3 mm long microbridge created from films of YBa2Cuj07 - (polycrystalline superconductor specimens). (A) Specimen thickness —500 A. (i) Uncoaled microbridge (ii) polypyrrole-coated microbridge following its room temperature electrochemical reduction. (B) Specimen thickness —900 A. (i) Uncoated microbridge (ii) microbridge coated with -2 yarn film of doped polythiophene. (Adapted from Refs. 3 and 11.)...

Fig. 37,16 Resistivity vs. temperature curves acquired for a 100 fim wide x 3 mm long microbridge formed from a YBa2Cu307-6 film with a thickness of 500 A supported on a polished MgO(IOO) substrate. Data are provided for (A) the bare bridge and the bridge coated with 2 fim of polypyrrole, in both its (B) undoped and (C) doped states. (Adapted from Ref. 3.)...

Fig. 3. Total resistance vs sample thickness for polystyrene Curve A, no precautions to reduce contact resistance Curve B, three precautions taken to reduce contact resistance (20).,...

Figure 19. Resistance vs. TITq for the 4-nm-thick Lao.gSro MnOj epitaxial film (circles - experimental data adopted from Ref. [5], solid line - calculated as described in text). Inset temperature dependence of the fraction of PM phase cpp for the same film (circles - calculated from Ref. [5], solid line - fitted...

Figure 10. A Plot of thickness vs time in developer derived from a laser end-point detector trace. The thickness change between maxima is a function of the laser wavelength and the index of refraction of the resist at that...

Figure 35. The normalized change in thickness remaining after development vs storage time after exposure for COP resist and poly (chloromethylstyrene). The styrene analog shows little or no ""dark-...

Fig. 7 IjV characteristics for an 8-nm Co/0.6-nm Al203/1.6-nm Alqs/lO-nm NigoFe2o junction. The fit to the IjV curve is shown as the line through the data points. The inset shows the exponential dependence of the junction resistance (Sj) vs Alq3 thickness, for a total of 72 junctions made in a single deposition. Taken from [48] with permission...

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