Requirements for TCO Contacts

Quantitatively, this is shown by the total absorption A of an a-Si H and pc-Si H layer of typical device thickness (da-Si H = 300 nm and c-si H = 1 pm, respectively) in Fig. 8.7. The absorption was calculated for one single light pass using the absorption coefficients a of Fig. 8.3 according to 

From an electrical point of view it is obvious that the TCO sheet resistance i sq (resistance of a square of a homogeneous film of a certain thickness) of 

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